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 LOW POWER BIDI(R) Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
Dimensions in mm
SBL52414x
1) 1mm above TO-bottom connector type
Absolute Maximum Ratings
Module
Operating temperature range at case, TC ............ -40C to 85C Storage temperature range, Tstg ......................... -40C to 85C Soldering temperature tmax=10 s, 2 mm distance from bottom edge of case, TS...............260C
Laser Diode
Direct forward current, IF max ......................................... 120 mA Radiant power CW, PF, rad .................................................1 mW Reverse Voltage, VR............................................................... 2 V
Monitor Diode
FEATURES * Designed for application in passive-optical networks * Integrated Wavelength Division Multiplexer (WDM) * Bi-Directional Transmission in 2nd and 3rd optical window * Single fiber solution * FP-Laser Diode with Multi-Quantum Well structure * Class 3B Laser Product * Suitable for bit rates up to 1.25 Gbit/s * Ternary Photodiode at rear mirror for monitoring and control of radiant power * Low noise / high bandwidth PIN diode * Hermetically sealed subcomponents, similar to TO 46 * With singlemode fiber pigtail
Reverse Voltage, VR..............................................................10 V Forward Current, IF .............................................................2 mA
Receiver Diode
Reverse Voltage, VR..............................................................10 V Forward Current, IF ............................................................2 mA Optical power into the optical port, Pport ....................... 1.5 mW
BIDI(R) is a registered trademark of Infineon Technologies
Fiber Optics MAY 2002
DESCRIPTION The Infineon module for bidirectional optical transmission has been designed for different optical networks structures: In the last few years the structure has changed from point to point planned for Broad band ISDN to a point to multipoint passive optical network (PON) architecture for the optical network in the subscriber loop. A transceiver can be realized with discrete elements (Fig. 1). Transmitter and receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength independent or WDM). Figure 1. Realization with discrete elements
Transmitter Coupler Receiver 2:1 or 2:2 3 dB wavelength independent or wavelength division multiplexing
TECHNICAL DATA The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics
Parameter Optical output power (maximum) Emission wavelength center of range PF=0.5 PF, max. Spectral width (RMS) Temperature coefficient of wavelength Threshold current (whole temperature range) Forward voltage PF=0.5 PF, max. Radiant power at Ith Slope efficiency (-40...85C) Variation of 1st derivative of P/I (0.05 to 0.4 mW) Differential series resistance Rise time (10%-90%) Fall time (10%-90%) Symbol Min. PF, max trans TC Ith 2 0.4 1270 1350 Typ. Max. Units mW nm
5 0.5 45 nm/K mA
VF Pth Svar 8 -30
1.5 20 60 30
V W mW/ A %
Infineon has realized this transceiver configuration in a compact module called a BIDI(R) (Fig. 2). This module is especially suitable for separating the opposing signals at the ends of a link. It replaces a discrete solution with a transmitter, receiver and coupler. The basic devices are a laser diode and a photodiode, each in a TO package, plus the filter in the beam path. A lens in the TO laser concentrates the light and enables it to be launched into the single-mode fiber of the module. In the same way the light from the fiber is focused onto the small, light-sensitive area of the photodiode to produce a high photo current. The mirror for coupling out the received signal is arranged in the beam so that the transmitter and receiver are at right angles to each other. This means the greatest possible degree of freedom in the layout of the electric circuit. Figure 2. Compact realization of the transceiver in one module
Beam Splitter Glass Lens
RS tr tf 100 270
8 200 500
ps
Monitor Diode Electro-Optical Characteristics
Parameter Dark current, VR=5 V, PF=0, T=Tmax Photocurrent, VR=5 V, PF=0.5 PF, max. Capacitance, VR=5 V, f=1 MHz Symbol IR IP C5 -1 50 Min. Typ. Max. 200 1500 10 1 Units nA A pF dB
Tracking error(1), VR=5 V TE
TOLaser
Fiber
Note 1. The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref=Imon (T=25C, PF=0.5 PF, max.). Thus, TE is given by: PF [T c ] TE [ dB ] = 10 x log PF [ 25 o C ]
TO-Detector
A decisive advantage of the module is its use of standard TO components. These devices, produced in large quantities, are hermetically sealed and tested before they are built in. This makes a very substantial contribution to the excellent reliability of the module. The solid metal package of the module serves the same purpose. It allows the use of modern laser welding techniques for reliable fixing of the different elements and the fiber holder.
Fiber Optics
SBL52414x, Low Power BIDI(R) Optical Standard Module 1310nm Emitting, 1550nm Receiving 2
Receiver Diode Electro-Optical Characteristics
Parameter Spectral sensitivity VR=5 V, =1550 nm Rise and fall time (10%-90%) RL=50 , VR=5 V Total capacitance VR=5 V, Popt=0, f=1 MHz Dark current VR=5 V, Popt=0 Symbol Min. Srec t r; t f 0.65 Typ. Max. 1 1 Units A/W ns
FIBER DATA The mechanical fiber characteristics are described in the following table. Fiber Characteristics
Parameter Mode Field Diameter Cladding Diameter Mode Field/Cladding Concentricity Error Cladding Non-circularity Mode Field Non-circularity Cut off Wavelength 1270 0.8 30 5 0.8 1.2 N m 1 Min. 8 123 Typ. 9 125 Max. 10 127 1 2 6 nm mm % Units m
C
1.5
pF
ID
50
nA
Module Electro-Optical Characteristics
Parameter Optical Crosstalk(1)
Note 1. Optical Crosstalk is defined as
Symbol Min. CRT
Typ.
Max. -47
Units dB
Jacket Diameter Bending Radius Tensile Strength Fiber Case Length
CRT [ dB ] = 10 x log
I Det.0 I Det.1
Pin Description
Pinning (bottom view) Transmitter
Pinning 1 (on request)
LD
2.54 mm
with: IDet,0 : the photocurrent with PF=0.5 PF, max., without optical input, CW laser operation, VR=2 V and IDet,1 : the photocurrent without PF but 0.5 PF, max. optical input , power, =1550 nm.
Pin Description
2 3 MD 4
End of Life Time Characteristics
Parameter Threshold current at T=Tmax Current above threshold, over full temperature range, at Imon,ref=Imon (T=25C, PF=0.5 PF, max., BOL) Tracking Error Detector Dark Current, VR=2 V, T=Tmax Monitor Dark Current, VR=2 V, T=Tmax Symbol Min. Ith IF 7 Typ. Max. 60 70 Units mA
1
2 1 3 4
Pinning 2 (Standard)
1
2 LD 3 MD
4
Receiver TE IR IR -1.5 1.5 400 1 dB nA
3 2.54 mm
Pinning 1 (Standard)
3 1 2
A
1 2
2.54 mm 3 1 2
Pinning 2 (on request)
3
1 2
Available Pinnings Type SBL52414x SBL51414x Transmitter 2 (Standard) 1 (on request) Receiver 1 (Standard) 1 (on request)
Other Pinnings on request / different drawing set required for non standard pinning
Fiber Optics
SBL52414x, Low Power BIDI(R) Optical Standard Module 1310nm Emitting, 1550nm Receiving 3
EYE SAFETY Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams. Especially do not look directly into the laser diode or the collimated laser beam when the diode is activated. CLASS 3B LASER PRODUCT according to IEC 60825-1
Required Labels
CONNECTOR OPTIONS
Model SBL52414G SBL51414G SBL52414N SBL51414N SBL52414Z SBL51414Z
INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM Class 3B Laser Product
Type SM FC/PC SM SC/PC 0 SM without connector
Class IIIb LASER PRODUCT according to FDA Regulations complies with 21 CFR 1040.10 and 1040.11
Required Label
LASER RADIATION - AVOID DIRECT EXPOSURE TO BEAM
SEMICONDUCTOR LASER INVISIBLE RADIATION CLASS IIIb LASER PRODUCT
Laser Data
Wavelength Maximum total output power Beam divergence (1/e2) 1310 nm less than 50 mW 10
Published by Infineon Technologies AG
Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your Infineon Technologies offices. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
(c) Infineon Technologies AG 2002 All Rights Reserved
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact the Infineon Technologies offices or our Infineon Technologies Representatives worldwide - see our webpage at www.infineon.com/fiberoptics
Infineon Technologies AG * Fiber Optics * Wernerwerkdamm 16 * Berlin D-13623, Germany Infineon Technologies, Inc. * Fiber Optics * 1730 North First Street * San Jose, CA 95112, USA Infineon Technologies K.K. * Fiber Optics * Takanawa Park Tower * 20-14, Higashi-Gotanda, 3-chome, Shinagawa-ku * Tokyo 141, Japan


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